| 摘要 |
PROBLEM TO BE SOLVED: To prevent erroneous writing operation caused by the interference between adjacent memory transistors in a semiconductor integrated circuit having a nonvolatile memory built therein to electrically erase data. SOLUTION: The semiconductor integrated circuit comprises a control gate formed as an impurity diffusion region having a longitudinal direction as a first direction, a plurality of floating gates symmetrically formed in memory cell sets and having portions extended in a second direction, a source and a drain for the memory transistor formed at both sides of each floating gate, and an impurity diffusion contact region formed between two of the floating gates as each memory cell set. The impurity diffusion regions to be formed as the sources of the two memory transistors are separated from each other between the two floating gates as each memory cell set, and the separated impurity diffusion regions and the impurity diffusion contact region are connected to a grounding wiring line. COPYRIGHT: (C)2008,JPO&INPIT
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