发明名称 |
NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
A nitride semiconductor device includes an n-type GaN substrate with a semiconductor device formed thereon and an n-type electrode which is a metal electrode formed on the rear surface of the GaN substrate. A surface modified layer and a reaction layer are interposed between the GaN substrate and n-type electrode. The surface modified layer serves as a carrier supplying layer, and is formed by causing the rear surface of the GaN substrate to react with a Si-containing plasma to be modified. The reaction layer is generated by partially removing a deposited material deposited on the surface modified layer by cleaning to generate a deposited layer and then causing Ti contained in a first metal layer and the deposited layer to partially react by heat treatment.
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申请公布号 |
US2008023799(A1) |
申请公布日期 |
2008.01.31 |
申请号 |
US20070772644 |
申请日期 |
2007.07.02 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
KANAMOTO KYOZO;SHIOZAWA KATSUOMI;KAWASAKI KAZUSHIGE;SAKUMA HITOSHI;HORIE JUNICHI;SHIGA TOSHIHIKO;OISHI TOSHIYUKI |
分类号 |
H01L29/207;H01L21/20;H01L33/12;H01L33/32;H01L33/40 |
主分类号 |
H01L29/207 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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