发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND ELECTRO-OPTICAL DEVICE
摘要 PROBLEM TO BE SOLVED: To suppress the degradation of an organic semiconductor layer as much as possible in the manufacture of a semiconductor device having a TFT with high driving ability and an organic TFT with excellent flexibility fabricated on a flexible board. SOLUTION: In the manufacture of a semiconductor device 10, driving circuits 50a, 50b preliminarily fabricated on a temporary substrate are transferred onto the surface of a flexible board 20, and then, an organic semiconductor layer is formed by a liquid phase process to fabricate an organic TFT 10a. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008020849(A) 申请公布日期 2008.01.31
申请号 JP20060194733 申请日期 2006.07.14
申请人 SEIKO EPSON CORP 发明人 HARA HISAKI
分类号 G02F1/167;H01L29/786;H01L51/05 主分类号 G02F1/167
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