发明名称 ANTIFUSE CIRCUIT WITH WELL BIAS TRANSISTOR
摘要 An antifuse circuit includes a terminal, an antifuse transistor, and a bias transistor. The antifuse transistor is formed on a substrate. The antifuse transistor is coupled to the terminal and includes a first gate terminal coupled to receive a first select signal. The bias transistor is coupled between the substrate and a bias voltage terminal. The bias transistor has a second gate terminal and is operable to couple the bias voltage terminal to the substrate responsive to an assertion of a bias enable signal at the second gate terminal.
申请公布号 US2008025135(A1) 申请公布日期 2008.01.31
申请号 US20070867396 申请日期 2007.10.04
申请人 MICRON TECHNOLOGY, INC.. 发明人 WILCOX WILLIAM J.
分类号 G11C8/00;H01H37/76;H01L29/00 主分类号 G11C8/00
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