| 发明名称 |
PRECURSORS FOR ATOMIC LAYER DEPOSITION |
| 摘要 |
<p>Stable ALD precursors that have at least one metal-nitrogen bond and a mixed ligand are presented. These ALD precursors exhibit self-limiting growth, at reduced deposition temperature and produce less contamination all with enhanced stability.</p> |
| 申请公布号 |
WO2008013675(A2) |
申请公布日期 |
2008.01.31 |
| 申请号 |
WO2007US15847 |
申请日期 |
2007.07.12 |
| 申请人 |
WANG, QING, MIN;THE BOC GROUP, INC.;MA, CE |
发明人 |
MA, CE;WANG, QING, MIN |
| 分类号 |
H01L21/31 |
主分类号 |
H01L21/31 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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