METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to reduce the time and cost of processes by combining a carbon nano tube with a self-assembly method to electrically connect top and bottom metal patterns. A method for manufacturing a semiconductor device comprises the steps of: preparing a semiconductor substrate having a lower metal pattern; forming an insulation layer on the semiconductor substrate; forming a contact hole pattern by etching a predetermined portion of the insulation layer, wherein the contact hole pattern exposes an upper part of the lower metal pattern; forming thiol-group on a surface of the exposed lower metal pattern; forming a contact plug by coupling a carbon nano tube to a surface of the lower metal pattern inside the contact hole pattern with a self-assembly method; and forming an upper metal pattern on an upper part of the insulation layer. The upper metal pattern is connected with the carbon nano tube contact plug.