| 摘要 |
PROBLEM TO BE SOLVED: To provide a microwave utilization device with a loss reduced and a higher efficiency aimed at, in a microwave generating device made of semiconductors. SOLUTION: Drive voltages of microwave generating means 6, 7 for irradiating microwaves on a heated object 2 loaded in the heating chamber 1 are increased with the use of GaN semiconductor elements, and by providing a plurality of pieces of the microwave generating means 6, 7, a loss each of the individual microwave generating means is reduced to improve efficiency of the microwave utilization device. COPYRIGHT: (C)2008,JPO&INPIT
|
