| 摘要 |
PROBLEM TO BE SOLVED: To eliminate current component due to the concentration of a gate field at the end of a silicon thin film which is generated at the end of an island-type semiconductor thin film of a top-gate thin film transistor, or the deviation of a threshold value, which is generated by a fixed charge near the end of the silicon thin film. SOLUTION: In either one side of the source side or the drain side of the island-type semiconductor thin film SEMI-l; a branch closed circuit DET is provided by extending a gate electrode GT endlessly along the profile of the island-type semiconductor thin film SEMI-l, to eliminate the current component route at the end of the island-type semiconductor thin film SEMI-l which will become a sub channel. COPYRIGHT: (C)2008,JPO&INPIT
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