发明名称 |
Insulating film formation method, semiconductor device, and substrate processing apparatus |
摘要 |
In an insulating film formation method, a cycle A in which O<SUB>3 </SUB>at a low flow rate is supplied onto a substrate and then O<SUB>3 </SUB>supplied is allowed to react with Hf on the substrate in a non-equilibrium state to form a hafnium oxide film is carried out M times (M>=1), and a cycle B in which O<SUB>3 </SUB>at a high flow rate is supplied onto the substrate and then O<SUB>3 </SUB>supplied is allowed to react with Hf on the substrate in an equilibrium state to form a hafnium oxide film is carried out N times (N>=1). These insulating film formation cycles are defined as one sequence. This sequence is repeated until a desired thickness is obtained, thereby forming a target insulating film.
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申请公布号 |
US2008026251(A1) |
申请公布日期 |
2008.01.31 |
申请号 |
US20070826495 |
申请日期 |
2007.07.16 |
申请人 |
SUZUKI JUN;YONEDA KENJI;MATSUYAMA SEIJI |
发明人 |
SUZUKI JUN;YONEDA KENJI;MATSUYAMA SEIJI |
分类号 |
H01L21/31;B32B9/00;C23C16/00 |
主分类号 |
H01L21/31 |
代理机构 |
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地址 |
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