发明名称 |
Lithografieverfahren zur Fotomaskenherstellung mittels Elektronenstrahllithografie |
摘要 |
The invention relates to a resist for electron beam lithography and to a process for producing photomasks for optical lithography. The inventive resist includes repeating units that are derived from maleic anhydride and that can act as an anchor group for the subsequent binding of silicon-containing groups. The etch stability of the resist can thus be subsequently increased so that there is no dimensional loss on transfer of the resist structure to a chromium layer arranged under the resist. |
申请公布号 |
DE10208785(B4) |
申请公布日期 |
2008.01.31 |
申请号 |
DE2002108785 |
申请日期 |
2002.02.28 |
申请人 |
QIMONDA AG |
发明人 |
ELIAN, KLAUS;SEBALD, MICHAEL |
分类号 |
G03F7/00;G03F1/68;G03F7/039;G03F7/30;G03F7/40 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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