| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a semiconductor layer of compounds of group III-V by which the composition ratio of N in the semiconductor layer of compounds of group III-V can be uniformized in the direction of its thickness, and to provide a method for manufacturing a semiconductor light element. <P>SOLUTION: The method for forming the semiconductor layer of compounds of group III-V includes a process S3 wherein a semiconductor layer 5 of compounds of group III-V including group III elements, arsenic elements, and nitrogen elements by supplying a group III material gas G1 including group III elements, an arsenic material gas G2 including arsenic elements, and a nitrogen material gas G3 including arsenic elements to a semiconductor layer 3 of compounds of group III-V including group III elements and arsenic elements. The process S3 includes a process S31 wherein the arsenic material gas G2 of supply quantity F1 is supplied to the semiconductor layer 3 of compounds of group III-V before starting supply of the nitrogen material gas G3, and a process S32 wherein the supply quantity of the arsenic material gas G2 is varied during a period from the start of supply of the nitrogen material gas G3 until a predetermined time elapses. <P>COPYRIGHT: (C)2008,JPO&INPIT |
