Termination structure, a mask for manufacturing a termination structure, a lithographic process and a semiconductor device with a termination structure

摘要

Termination structure for a pattern, especially an at least partially regular spaced pattern used in the manufacturing of semiconductor devices, especially DRAM-chips, wherein the termination structure comprises at least a first line-shaped element and at least one extension element adjacent to the first line-shaped element partially increasing the width of the first line-shaped element.