METHOD FOR FORMING TRANSPARENT CONDUCTIVE FILM

摘要

Disclosed is a transparent conductive film having low resistivity. Specifically disclosed is a method for forming a film, wherein a transparent conductive film is first formed on the surface of a substrate (21) by sputtering a target (11), which is mainly composed of ZnO and added with Al<SUB>2</SUB>O<SUB>3</SUB> and TiO<SUB>2</SUB>, in a vacuum atmosphere, and then an annealing treatment is performed on the transparent conductive film by heating the film at a temperature not less than 250°C but not more than 400°C. The thus-obtained transparent conductive film is decreased in resistivity, since it is mainly composed of ZnO, while being added with Al and Ti. The thus-formed transparent conductive film is suitable as a transparent electrode such as FDP or the like.