| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a high reliability even in a fined case. <P>SOLUTION: The semiconductor device has a semiconductor substrate with a main surface, and a plurality of projecting patterns, formed on the main surface of the semiconductor substrate so that each has a floating gate FG and a control gate CG. The semiconductor device further has first insulating films 11 formed so as to coat each top face and side face of a plurality of the projecting patterns, and make the widths of sections coating upper-side side faces larger than those of sections coating the lower-side faces of the projecting patterns. The semiconductor device further has a second insulating film 12 coating the top faces and side faces of the first insulating films 11, so as to close air gaps GP among the adjacent projecting patterns. Places closed by the second insulating film 12 for the air gaps GP are made higher than the top faces of the floating gates FG, and lower than the top faces of the control gates CG. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
