SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a capacitor of a stack DRAM excellent in electrical characteristics and reliability. SOLUTION: There is provided a semiconductor device having: a lower electrode connected to one of a source or a drain of an MIS transistor; and a capacitor for charge storage composed of a capacitor insulating film formed on an upper face and a side face of the lower electrode and an upper electrode formed on the capacitor insulating film, wherein the side face near a bottom part of the lower electrode is recessed and this recessed part is brought into contact with the insulating film different from the capacitor insulating film. COPYRIGHT: (C)2008,JPO&INPIT