| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor shortening a gate length and a distance between a gate and a channel under the coexistence of an inhibition for an increase in a gate capacity and the inhibition for the increase in a gate resistance, and having excellent static characteristics and high-frequency characteristics; and to provide a manufacturing method for the field effect type transistor. SOLUTION: A crystal structure is formed on a semiconductor crystal substrate 1, with a buffer layer 2, a channel layer 3, a barrier layer 4, a passivation layer 5, and an ohmic cap layer 6 laminated therein in the order. A source electrode 7 and a drain electrode 8 are formed on the ohmic cap layer 6, and an insulating film 10 is formed on the passivation layer 5 exposed by removing a part of the ohmic cap layer 6 in a region between the source electrode 7 and the drain electrode 8. A part of the insulating film 10 and a part of the passivation layer 5 are removed, and a gate electrode 13 is formed to a section exposing the barrier layer 4, thus configuring a field effect type transistor. COPYRIGHT: (C)2008,JPO&INPIT
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