| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of evaluating a semiconductor substrate by which it can be judged whether or not there is a conductive layer whose conduction type is different from that of the semiconductor substrate in the surface layer of the semiconductor substrate. SOLUTION: The method uses a MOS structure to evaluate a semiconductor substrate. At least, an oxide film is formed on the semiconductor substrate, and an electrode is formed thereon to manufacture a MOS structure, and then an electric field is applied between the electrode and the semiconductor substrate in the direction of carrier accumulation of the semiconductor substrate, so as to measure an I-V characteristic. Based on an F-N current value at a specified electric field strength in the I-V characteristic, whether or not there is a conductive layer whose conductivity type is different from that of the semiconductor substrate in the surface layer of the semiconductor substrate is judged. COPYRIGHT: (C)2008,JPO&INPIT
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