发明名称 JUNCTION FIELD EFFECT TRANSISTOR LEVEL SHIFTING CIRCUIT
摘要 <p>A level shifting circuit can include a first driver junction field effect transistor (JFET) of a first conductivity type having a source coupled to a first supply node, a drain coupled to an output node, and a gate coupled to a first driver control node. A first driver control circuit can include a first control JFET of a second conductivity type having a source coupled to a second supply node, a gate coupled to an input node that is coupled to receive an input signal, and a first level shifting stack coupled between the source of the first control JFET and the first driver control node. The magnitude of the potential between the first supply node and the second supply node is greater than a voltage swing of the input signal.</p>
申请公布号 WO2008014383(A1) 申请公布日期 2008.01.31
申请号 WO2007US74440 申请日期 2007.07.26
申请人 DSM SOLUTIONS, INC.;THUMMALAPALLY, DAMODAR, R.;CHOU, RICHARD, K. 发明人 THUMMALAPALLY, DAMODAR, R.;CHOU, RICHARD, K.
分类号 H03K19/0185;H03K3/288;H03K3/356 主分类号 H03K19/0185
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