发明名称 POWER AMPLIFIER CIRCUIT FOR PEAK ENVELOPE MODULATION OF HIGH FREQUENCY SIGNAL
摘要 A power amplifier circuit for a peak envelope modulation of a high frequency signal is provided to reduce the loss of power and to improve the distortion of signals by generating a power amplified signal by the envelope modulation of the high frequency signal. A power amplifier circuit for peak envelope modulation of a high frequency signal includes a transformer(TF), and a transistor(Q51). The transformer receives a first signal over a predetermined level, selected from the envelope of a carrier signal, and generates a conversion signal. The transistor operates based on the conversion signal, receives a second signal having a predetermined DC component, generated based on the carrier signal, and amplifies the second signal according to the conversion signal to generate an output signal.
申请公布号 KR20080010569(A) 申请公布日期 2008.01.31
申请号 KR20060070733 申请日期 2006.07.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, SEUNG WOO
分类号 H03F1/02;H03F3/21 主分类号 H03F1/02
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