发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a word line drive circuit which suppresses a standby current due to GIDL. SOLUTION: The word line drive circuit has: first and second MOS transistors 12 and 18 of conductivity types different from each other which have their gates connected to an input signal MWLB in common, and also have their sources connected to first and second power sources RAI and VKK respectively; and a third MOS transistor 16 of the same conductivity type with the first MOS transistor which is connected between drains of the first and second MOS transistors. The connection point between the drains of the second and third MOS transistors is connected to a word line WL, and the MWLB is held at a HIGH potential, and when the second transistor 18 is ON, a potential lower than the HIGH potential of the MWLB is applied to the gate of the third MOS transistor 16. A signal SEC whose HIGH potential is lower than the HIGH potential of the MWLB, or a fixed GND potential is supplied to the gate of the third MOS transistor 16. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008022349(A) 申请公布日期 2008.01.31
申请号 JP20060193014 申请日期 2006.07.13
申请人 NEC ELECTRONICS CORP 发明人 MIYATA MASAKI
分类号 H03K19/0175;G11C11/407 主分类号 H03K19/0175
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