| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which a crystal film composed of a single crystal in which defects are further reduced and having good flatness can be produced at a higher speed when an aluminum-based group III nitride crystal film is produced by a hydride vapor phase epitaxy method. SOLUTION: The method for producing an aluminum-based group III nitride crystal includes a process for growing the aluminum-based group III nitride crystal on a substrate 24 being heated by reacting a group III halide gas containing aluminum halide with a nitrogen source gas in a reactor, and is characterized in that the crystal is grown by holding the substrate 24 on a supporting stage 23, which is formed of a ceramic such as a composite sintered compact of aluminum nitride and boron nitride and has a heating resistor buried therein and a heating function, and keeping the substrate 24 at a high temperature not lower than e.g., 1,150°C and higher than the temperature of the wall of the reactor in a reaction zone. COPYRIGHT: (C)2008,JPO&INPIT
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