SEMICONDUCTOR DEVICE FABRICATION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method which ensures a good coating step property and enables semiconductor devices to be fabricated at low cost. SOLUTION: This method has a step for forming a ruthenium film or ruthenium oxide film on a substrate by employing a gas produced by ruthenium liquid material vaporization and an oxygen-containing gas. The film formation step comprises an initial film formation step for forming the ruthenium film or ruthenium oxide film on the substrate, and an actual film formation step for using the film formed in the initial film formation step as a base and forming the ruthenium film or ruthenium oxide film thicker than that formed in the initial film formation step. Film formation takes place in a way that formation in the initial film formation step is faster than that in the actual film formation step and these steps are both carried out consecutively within the same reaction chamber. COPYRIGHT: (C)2008,JPO&INPIT