INSULATED GATE BIPOLAR TRANSISTOR, AND METHOD FOR MANUFACTURING IT

摘要

PROBLEM TO BE SOLVED: To provide an insulated gate bipolar transistor having stabilized characteristics, and to provide a method for manufacturing it. SOLUTION: In IGBT1, a plurality of components are formed, the components being a p-type emitter layer 2; an n-type buffer layer 3 provided on the p-type emitter layer 2; an n-type base layer 4 which is provided on the n-type buffer layer 3 and has higher resistivity than that of the n-type buffer layer 3; a p-type base layer 5 provided on a portion of the top face of the n-type base layer 4; an n-type source layer 6 provided on a portion of the top face of the p-type base layer; a trench 7 running through the n-type layer 6 and the p-type base layer 5 and then reaching the p-type base layer 4; a gate electrode 9 provided in the trench 7; a gate insulator provided between the gate electrode 9 and the inner face of the trench 7. The thickness of the n-type emitter layer 2 is 5 to 50μm, the impurity concentration of it is 2×1016to 1×1018cm-3. COPYRIGHT: (C)2008,JPO&INPIT