| 摘要 |
PROBLEM TO BE SOLVED: To provide an electronic device with very high reliability and having two kinds or more regions demarcated on a substrate without losing a function of a first insulation film being a silicon oxide film or the like, in spite of use of a second insulation film comprising a High-k insulation material in the case of separately manufacturing the insulation film by each region. SOLUTION: A silicon nitride film 5 is formed on the silicon oxide film 4 acting like a gate insulation film of an I/O film forming region; and the High-k insulation material, an HfSiO film 7 in this case, acting like a gate insulation film of a low leak film forming region is formed in this state. The silicon oxide film 4 and the HfSiO film 7 are laminated via the silicon nitride film 5. COPYRIGHT: (C)2008,JPO&INPIT
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