| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor circuit writing or reading data at high speed to/from a memory cell even in low voltage driving, without increasing the scale of a circuit. SOLUTION: This semiconductor circuit is equipped with: a plurality of memory cells 1; a plurality of bit lines BL, BLB; a plurality of word lines WL; a word line driver circuit 5; a delay circuit 8 for delaying an input from the word line driver circuit 5; a transmission gate 6 disposed on the word line WL between the memory cell 1 and word line driven circuit 5 for controlling transmission of a potential to the memory cell 1 from the word line driver circuit 5 on the basis of an output from the delay circuit 8; and a booster transistor 7 connected to the word line WL between the memory cell 1 and transmission gate 6 for boosting the potential of the word lines WL on the basis of the output from the delay circuit 8. COPYRIGHT: (C)2008,JPO&INPIT
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