| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile memory element containing a variable resistance substance. SOLUTION: The non-volatile memory element contains a variable resistance substance and includes a lower electrode 21, an intermediate layer 22 which is formed on the lower electrode and is composed of one substance selected among HfO, ZnO, InZnO or ITO, an NiO layer 23 formed on the intermediate layer, and an upper electrode 24 formed on the NiO layer. Whereby, the memory element which has a characteristic of bipolar switching of multi-level in accordance with a size can be easily provided. COPYRIGHT: (C)2008,JPO&INPIT
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