Semiconductor Devices and Methods of Fabricating the Same

摘要

Provided are semiconductor devices and methods of fabricating the semiconductor devices. Embodiments of such methods may include sequentially forming a gate insulation layer and a metal layer on a semiconductor substrate and etching the metal layer to form a metallic residue on the gate insulation layer. Such methods may also include monitoring an etch by-product to detect an etch endpoint for stopping the etching and forming a polysilicon layer on the gate insulation layer including the metallic residue.