NONVOLATILE MEMORY DEVICE, AND METHOD OF MANUFACTURING SAME

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile memory device the characteristics of which have been improved. SOLUTION: The nonvolatile memory device includes a semiconductor substrate including an active region and first and second memory cell strings on the active region. The first memory cell string including a plurality of first word lines that cross the active region between a first ground selection line and a first string selection line and a first arrangement interval is provided between adjoining lines in the plurality of the first word lines. The second memory cell string includes a plurality of second word lines that cross the active region between a second ground selection line and a second string selection line and the same first arrangement interval is provided between adjoining lines in the plurality of the second word lines. The first ground selection line is between the second ground selection line and the plurality of the first word lines and the second ground selection line is between the first ground selection line and the plurality of the second word lines. COPYRIGHT: (C)2008,JPO&INPIT