| 摘要 |
PROBLEM TO BE SOLVED: To provide a vertical Hall element capable of increasing flexibility in selecting a substrate for hall element formation, and to provide a method for fabrication thereof. SOLUTION: This vertical Hall element is formed on a p-type silicon semiconductor substrate. When a magnetic-field component parallel to a surface of the substrate is applied to a magnetic detector HP in an n-type semiconductor area 12 while a current with components perpendicular to the surface of the substrate is applied to the magnetic detector HP, a hall voltage signal corresponding to the magnetic-field component is output. A semiconductor area 12 is formed by adding an n-type conductive impurity to the substrate and dispersing it there. In addition, the semiconductor area 12 is formed in depth direction with a density variation. COPYRIGHT: (C)2008,JPO&INPIT
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