| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique for discriminating combinations of electrodes having improved electron and hole injection efficiencies in an organic semiconductor of an organic TET, achieve two kinds of FETs, i.e., n- and p-type FETs, and to provide a complementary MOS (CMOS). SOLUTION: The technique is introduced for generally obtaining the vacuum level shiftΔin an electrode metal-organic semiconductor interface from physical constants of the constituent elements of electrodes and an organic semiconductor. The electrode metal is changed by the electrochemical method to form electrodes capable of controlling the electron and hole injections. Two kinds of FETs, n- and p-type FETs, are achieved with these electrodes, and a complementary MOS (CMOS) is provided. COPYRIGHT: (C)2008,JPO&INPIT
|
