| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory comprising a memory cell utilizing the sidewall of an island-like semiconductor layer for avoiding a decrease in write and read speeds. SOLUTION: The island-like semiconductor layer is formed on a semiconductor substrate. The island-like semiconductor layer comprises a non-volatile semiconductor memory cell. The non-volatile semiconductor memory cell has: a drain diffusion layer formed at the upper portion, a source diffusion layer formed on the lower portion, a charge storage layer formed on the channel region on the sidewall sandwiched by the drain and source diffusion layers via a gate insulating film, and a control gate formed on the charge storage layer. In the non-volatile semiconductor memory, the non-volatile semiconductor memory cells are arranged in a matrix, a bit line connected to the drain diffusion layer is wired in a row direction, a control gate line is wired in a columnar direction, and a source line connected to the source diffusion layer is wired in the row direction. In this case, a common source line connected to the source line is formed for each of a prescribed number of control gate lines. The common source line is made of metal and is wired in the column direction. COPYRIGHT: (C)2008,JPO&INPIT
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