发明名称 |
SEMICONDUCTOR STRUCTURE COMPRISING FIELD EFFECT TRANSISTORS WITH STRESSED CHANNEL REGIONS AND METHOD OF FORMING THE SAME |
摘要 |
A method of forming a semiconductor structure comprises providing a semiconductor substrate comprising a first transistor element and a second transistor element. Each of the first transistor element and the second transistor element comprises a gate electrode. A stressed material layer is deposited over the first transistor element and the second transistor element. The stressed material layer is processed to form from the stressed material layer sidewall spacers adjacent the gate electrode of the second transistor element and a hard mask covering the first transistor element. A pair of cavities is formed adjacent the gate electrode of the second transistor element. A pair of stress-creating elements is formed in the cavities and the hard mask is at least partially removed.
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申请公布号 |
US2008023771(A1) |
申请公布日期 |
2008.01.31 |
申请号 |
US20070685847 |
申请日期 |
2007.03.14 |
申请人 |
ROMERO KARLA;BEYER SVEN;HOENTSCHEL JAN;STEPHAN ROLF |
发明人 |
ROMERO KARLA;BEYER SVEN;HOENTSCHEL JAN;STEPHAN ROLF |
分类号 |
H01L29/76;H01L21/8238 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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