| 摘要 |
A method of bonding a thin semiconductor film onto a rectangular substrate (22) is disclosed. The method makes it possible to exfoliate rectangular semiconductor films from a round precursor semiconductor wafer, thereby providing for efficient tiling of the substrate with semiconductor film. The method includes the steps of creating a damage zone (12) in the precursor wafer (10) by ion implantation of the wafer, removing a portion (16) of the wafer to formed a raised portion (18), bonding the raised portion of the wafer (10) to the substrate (22), and exfoliating the bonded raised portion. |
