发明名称 Verfahren zur Herstellung einer Photolithographie-Belichtungsmaske
摘要 A method for fabricating a mask comprising the steps of: (a) forming a light-shielding film on an entire surface of a substrate including an actual pattern region (R) and an unoccupied region (S) other than the actual pattern region; (b) patterning the light-shielding film (2a) on the actual pattern region while leaving the light-shielding (2b) film on the unoccupied region; and (c) removing the light-shielding film on the unoccupied region while leaving the patterned light-shielding film on the actual pattern region. <IMAGE>
申请公布号 DE60034661(T2) 申请公布日期 2008.01.31
申请号 DE2000634661T 申请日期 2000.11.15
申请人 SHARP K.K. 发明人 KOBAYASHI, SHINJI
分类号 G03F1/36;G03F1/54;G03F1/60;G03F1/68;G03F1/80;G03F7/00;G03F7/20;H01L21/027;H01L21/321 主分类号 G03F1/36
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