发明名称 |
Verfahren zur Herstellung einer Photolithographie-Belichtungsmaske |
摘要 |
A method for fabricating a mask comprising the steps of: (a) forming a light-shielding film on an entire surface of a substrate including an actual pattern region (R) and an unoccupied region (S) other than the actual pattern region; (b) patterning the light-shielding film (2a) on the actual pattern region while leaving the light-shielding (2b) film on the unoccupied region; and (c) removing the light-shielding film on the unoccupied region while leaving the patterned light-shielding film on the actual pattern region. <IMAGE> |
申请公布号 |
DE60034661(T2) |
申请公布日期 |
2008.01.31 |
申请号 |
DE2000634661T |
申请日期 |
2000.11.15 |
申请人 |
SHARP K.K. |
发明人 |
KOBAYASHI, SHINJI |
分类号 |
G03F1/36;G03F1/54;G03F1/60;G03F1/68;G03F1/80;G03F7/00;G03F7/20;H01L21/027;H01L21/321 |
主分类号 |
G03F1/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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