MEMORY CIRCUIT USING A REFERENCE FOR SENSING

摘要

A memory (12) includes a plurality of memory cells (12), a sense amplifier (18) coupled to at least one of the plurality of memory cells, a temperature dependent current generator (26) comprising a plurality of selectable temperature dependent current sources (52-62) for generating a temperature dependent current, a temperature independent current generator (28) comprising a plurality of selectable temperature independent current sources (70, 72, 74) for generating a temperature independent current, and a summer (30) coupled to the temperature dependent current generator (26) and the temperature independent current generator (28) for combining the temperature dependent current and the temperature independent current to generate a reference current for use by the sense amplifier (18). A temperature coefficient of the reference current is approximately a same as a temperature coefficient of a memory cell current of at least one of the plurality of memory cells.