| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a microwave power amplifier which can be improved in gain and output by reducing distribution deviation and placing FET cells in uniform operation. <P>SOLUTION: The microwave power amplifier is provided with an FET chip 2 comprising a plurality of FET cells 1, an input matching circuit 3 connected to the input side of the FET chip 2, and an output matching circuit 4 connected to the output side of the FET chip 2, and at least one of the input matching circuit 3 and the output matching circuit 4 includes a microstrip line 7 or 9 which is connected to the FET chip 2 and provided with a plurality of slits 11 or 12 on the FET chip side in the propagation direction of a signal. <P>COPYRIGHT: (C)2008,JPO&INPIT |
