发明名称 GALLIUM AND CHROMIUM IONS FOR OXIDE REMOVAL RATE ENHANCEMENT
摘要 <p>The invention provides a chemical-mechanical polishing composition comprising silica, a compound in an amount sufficient to provide 0.2 mM to 10 mM of a metal cation selected from the group consisting of gallium (III), chromium (II), and chromium (III), and water, wherein the polishing composition has a pH of 1 to 6. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.</p>
申请公布号 WO2008013668(A1) 申请公布日期 2008.01.31
申请号 WO2007US15714 申请日期 2007.07.10
申请人 CABOT MICROELECTRONICS CORPORATION 发明人 GRUMBINE, STEVEN
分类号 C09K3/14 主分类号 C09K3/14
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