METHOD FOR FORMING LANDING PLUG OF SEMICONDUCTOR DEVICE

摘要

A method for forming a landing plug of a semiconductor device is provided to prevent a bridge phenomenon between landing plugs by suppressing dishing of an SOD(Spin On Dielectric) film. A method for forming a landing plug of a semiconductor device includes the steps of: forming a gate(G) having a nitride film based hard mask film(34) on a cell region and a peripheral region of a semiconductor substrate(31); forming a junction region in a substrate surface of both sides of the gate; forming an SOD film as an interlayer insulating film on a front surface of the substrate to cover the gate; annealing the SOD film; applying a CMP(Chemical Mechanical Polishing) process to the annealed SOD film until the hard mask film of the gate is exposed; forming a contact hole to expose a landing plug forming region by etching the SOD film passed through the CMP process; forming a poly silicon film(38) on a front surface of the substrate to bury the contact hole; removing a part of the poly silicon film formed on a region other than the landing plug forming region and the peripheral region; and applying the CMP process to the partially removed poly silicon film to expose the hard mask film of the gate.