| 摘要 |
A method for manufacturing a semiconductor device having a side wall is provided to form a small contact to be easily used for reducing parasitic capacitance. A method for manufacturing a semiconductor device having a side wall comprises the steps of: forming a plurality of gates on an upper part of a semiconductor substrate; forming a first side wall layer on an upper part of the gate; forming a second side wall layer on the first side wall layer, wherein the second side wall layer consists of an easily oxidized material; forming an interlayer dielectric on the second side wall layer filling the gates; forming a contact hole between gates by contact-etching in a magnetic alignment contact method; oxidizing the second side wall layer exposed as a side wall shape inside the contact hole; and exposing the semiconductor substrate by etching a first side wall layer of a lower end of the contact hole.
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