| 摘要 |
A method for manufacturing a semiconductor device is provided to etch a silicon layer of a side wall of a recess selectively by exposing a semiconductor substrate of the side wall of the recess and etching the side wall of the recess, thereby preventing generation of silicon residue during a process of forming a bulb type recess. A method for manufacturing a semiconductor device includes the steps of: forming a first recess by etching a semiconductor substrate(100) with a device isolation film(110) for defining an active region; forming a photosensitive film on a surface of the semiconductor substrate and a bottom part of the first recess; etching a side wall of the first recess with the photosensitive film as a barrier film; forming a spacer(125) on the side wall the first recess after removing the photosensitive film; and forming a second recess(130) by etching the bottom part of the first recess with the spacer as a mask.
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