| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile phase-change memory structure having a memory structure where a phase-change film cannot be damaged easily, and to provide a reliable phase-change nonvolatile memory. <P>SOLUTION: In the phase-change nonvolatile memory where an interlayer insulation film 9 and a plug 13 are formed at the side of one main surface on a silicon substrate 1, the phase-change film 15 that can take mutually different specific resistance values due to a phase-change is provided on the surface of the interlayer insulation film 9 and the plug 13, and an upper electrode film 16 is provided on the upper surface of the phase-change film 15. In the phase-change nonvolatile memory, a relationship between a film thickness T of the phase-change film 15 and the amount of projection L of the upper electrode film 16 from the plug 13 is set to 0.3≤L/T≤1, thus reducing the density of current flowing to the phase-change film near the outer periphery of the plug, suppressing migration, enabling rewriting with low energy, and hence obtaining the reliable phase-change nonvolatile memory. <P>COPYRIGHT: (C)2008,JPO&INPIT |
