SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To reduce size and footprint of a semiconductor device.

SOLUTION: In a semiconductor device 100, a light emitting element 120 is mounted on the upper surface of a semiconductor substrate 102. In the impurity diffusion region of the semiconductor substrate 102, a zener diode (semiconductor element) 108 consisting of a conductive type P layer 104 and an N layer 106 where the P layer 104 is doped and diffused with N type impurities of conductive type are formed. The semiconductor substrate 102 is formed from silicon (Si), and on its surface, an oxide film 112 which is an insulating layer is formed. Upper surface side wiring layers 114A and 114B are formed on the upper surface side of the semiconductor substrate 102. Electrodes 122 and 124 of the light emitting element 120 are connected to electrodes 110A and 110B by way of the upper surface side wiring layers 114A and 114B. The P layer 104 and N layer 106 are connected in parallel to the light emitting element 120 by way of the upper surface side wiring layers 114A and 114B.

COPYRIGHT: (C)2008,JPO&INPIT