METHOD OF FORMING A DIELECTRIC LAYER STRUCTURE AND METHOD OF FORMING A NON-VOLATILE MEMORY DEVICE USING THE SAME

摘要

A method of forming a dielectric layer structure and a method of forming a non-volatile memory device using the same are provided to improve the reliability of the non-volatile memory device and increase a programming and removal speed of the non-volatile memory device. A method of forming a dielectric layer structure includes the steps of: forming a first oxidization film(102) on a substrate(100); forming a preliminary silicon nitride film on the first oxidization film by using silicon source gas and nitrogen source gas as reaction gas; converting the preliminary silicon nitride film into a silicon nitride film(106) including excessive amount of silicon by flowing only the silicon source gas on the preliminary silicon nitride film by an in-situ method; and forming a second oxidization film(108) on the silicon nitride film. The method of forming the dielectric layer structure further includes a step of forming the silicon nitride film on multiple layers by repeating the steps of injecting the silicon source gas and the nitrogen source gas as the reaction gas, and flowing only the silicon source gas.