发明名称 VAPOR PHASE GROWING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a vapor phase growing apparatus which can effectively increase the temperature of a substrate only by adding a simple member, and can extend the service life of a heater and reduce power consumption. SOLUTION: A substrate 13 which is held at a susceptor 12 installed within a flow channel 11 is heated by heater 14 by means of the susceptor 12, and a material gas is supplied into the flow channel 11 to accumulate reaction product over the substrate, and grow a thin film. In this case, a reflection member 18 with higher heat reflectivity than the reaction product is provided on the wall surface of the flow channel 11 facing the surface of the substrate, and radiant heat radiated from the substrate 13 is reflected on the reflection member to reheat the substrate 13. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008021708(A) 申请公布日期 2008.01.31
申请号 JP20060190230 申请日期 2006.07.11
申请人 TAIYO NIPPON SANSO CORP 发明人 YAMAGUCHI AKIRA
分类号 H01L21/31;C23C16/46 主分类号 H01L21/31
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