发明名称 |
Phase-changeable memory device and method of manufacturing the same |
摘要 |
A phase changeable random access memory (PRAM) and methods for manufacturing the same. An example unit cell of a non-volatile memory, such as a PRAM, includes a MOS transistor, connected to an address line and a data line, where the MOS transistor receives a voltage from the data line. The unit cell further includes a phase change material for changing phase depending on heat generated by the voltage and a top electrode, connected to a substantially ground voltage.
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申请公布号 |
US2008026535(A1) |
申请公布日期 |
2008.01.31 |
申请号 |
US20070902712 |
申请日期 |
2007.09.25 |
申请人 |
YANG SOO-GUIL;JEONG HONG-SIK;HWANG YOUNG-NAM |
发明人 |
YANG SOO-GUIL;JEONG HONG-SIK;HWANG YOUNG-NAM |
分类号 |
H01L27/105;H01R43/00;G11C11/00;G11C16/02;H01L21/331;H01L27/10;H01L27/115;H01L27/24;H01L45/00 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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