发明名称 |
Spacer layer etch method providing enhanced microelectronic device performance |
摘要 |
A method for forming a field effect transistor device employs a conformal spacer layer formed upon a gate electrode. The gate electrode is employed as a mask for forming a lightly doped extension region within the semiconductor substrate and the gate electrode and conformal spacer layer are employed as a mask for forming a source/drain region within the semiconductor substrate. An anisotropically etched shaped spacer material layer is formed upon the conformal spacer layer and isotropically etched to enhance exposure of the source/drain region prior to forming a silicide layer thereupon.
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申请公布号 |
US2008026518(A1) |
申请公布日期 |
2008.01.31 |
申请号 |
US20060495348 |
申请日期 |
2006.07.28 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
SU HUNG DER;HSU JU-WANG;HUANG YI-CHUN;WU SHIEN-YANG;CHEN YUNG-SHUN;SHIE TUNG-HENG;CHIU YUAN-HUNG;CHEN JYH-HUEI;LIAW JHON JHY |
分类号 |
H01L21/8234 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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