| 摘要 |
A method for manufacturing a capacitor of a semiconductor device is provided to prevent a leakage current generated in the inside of the capacitor by forming a cap nitride film pattern on a top part of an SNC(Storage Node Contact) plug, thereby improving final yield of the semiconductor device. A method for manufacturing a capacitor of a semiconductor device includes the steps of: depositing a cap nitride film on a top part of a semiconductor substrate(21) provided with a first interlayer insulating film(23) including a storage node contact plug(25); depositing a buffer oxide film pattern(29-1) on a top part of the cap nitride film; forming a cap nitride film pattern(27-1) by patterning the cap nitride film using the buffer oxide film pattern as an etching mask until the storage node contact plug is exposed, wherein a side of the cap nitride film pattern including a part of the storage node contact plug; depositing a second interlayer insulating film on a front surface of the outputs; forming a hard mask pattern(33-1) in a top part of the second interlayer insulating film; forming a capacitor trench by etching the second interlayer insulating film until the cap nitride film pattern and the storage node contact plug are exposed; and sequentially depositing a barrier metallic layer for a bottom electrode, a dielectric material for the capacitor, and an electrode metallic layer in the trench.
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