| 摘要 |
A method for driving a CCD(Charge Coupled Device) solid-state imaging device is provided to set a voltage applied to overflow drain electrodes during transfer driving and a voltage applied to the overflow drain electrodes during accumulation driving differently from each other, thereby preventing charges from leaking to potential wells from the overflow drain electrodes. A CCD solid-state imaging device comprises a plurality of first channel regions for transferring information charges, overflow drain regions for absorbing the information charges of the first channel regions, drain electrodes connected to the overflow drain regions, and a plurality of first transfer electrodes across the first channel regions. The CCD forms a plurality of potential wells formed in the first channel regions, wherein the potential wells accumulates the information charges therein. The information charges are transferred along the first channel regions. A first potential is applied to the drain electrode during accumulation driving where the information charges are accumulated in the potential wells. A second potential different from the first potential is applied to the drain electrodes during transfer driving when the information charges are transferred.
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