SEMICONDUCTOR MEMORY DEVICE INCLUDING BOTH DATA REDUNDANCY MEMORY CELL ARRAY AND LOCAL REDUNDANCY MEMORY CELL ARRAY AND REDUNDANCY METHOD THEREOF

摘要

A semiconductor memory device comprising a data redundancy memory cell array and a local redundancy memory cell array and a redundancy method thereof are provided to perform redundancy operation by using both the data redundancy memory cell array and the local redundancy memory cell array together. A plurality of normal memory blocks(110-1-110-4) comprises a normal memory cell array and a local redundancy memory cell array replacing defect generated in the normal memory cell array in the unit of column. At least one data line redundancy memory block comprises a data redundancy memory cell array replacing defects generated in the normal memory cell arrays of the plurality of normal memory cell blocks in the unit of column. A redundancy control part controls to replace partial defects with columns of the data line redundancy memory cell and to replace the other partial defects with columns of the local redundancy memory cell array when at least two columns included in one normal memory cell array have defects.