| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device employing a trench isolation structure in which reliability is enhanced by forming a cavity selectively, thereby suppressing troubles due to crystal defect effectively; and to provide its fabrication process. <P>SOLUTION: The semiconductor device comprises a semiconductor substrate 1 having a major surface; a first isolation region 30A having a fist recess 10A formed in the major surface of the semiconductor substrate 1, a first isolation insulating film 20A formed in the fist recess 10A, and an air gap AG formed in the isolation insulating film 20A; and a second isolation region 30B formed in the major surface of the semiconductor substrate 1 and having a second recess 10B wider than the fist recess 10A, and a second isolation insulating film 20B filling the second recess 10B. <P>COPYRIGHT: (C)2008,JPO&INPIT |
